MT47H512M4THN-25E:M

IC DRAM 2G PARALLEL 400MHZ
MT47H512M4THN-25E:M P1
MT47H512M4THN-25E:M P1
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Micron Technology Inc. ~ MT47H512M4THN-25E:M

Part Number
MT47H512M4THN-25E:M
Manufacturer
Micron Technology Inc.
Description
IC DRAM 2G PARALLEL 400MHZ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MT47H512M4THN-25E:M PDF online browsing
Family
Memory
  • In Stock : 12335 pcs
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Product Parameter

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Part Number MT47H512M4THN-25E:M
Part Status Obsolete
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 2Gb (512M x 4)
Clock Frequency 400MHz
Write Cycle Time - Word, Page 15ns
Access Time 400ps
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type -
Package / Case -
Supplier Device Package -

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