MCMN2012-TP

MOSFET N-CH 20V 12A DFN202
MCMN2012-TP P1
MCMN2012-TP P1
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Micro Commercial Co ~ MCMN2012-TP

Part Number
MCMN2012-TP
Manufacturer
Micro Commercial Co
Description
MOSFET N-CH 20V 12A DFN202
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MCMN2012-TP PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number MCMN2012-TP
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.2V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 4V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 11 mOhm @ 9.7A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN2020-6J
Package / Case 6-WDFN Exposed Pad

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