IXTA1N170DHV

MOSFET N-CH 1700V 1A TO-263
IXTA1N170DHV P1
IXTA1N170DHV P1
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IXYS ~ IXTA1N170DHV

Part Number
IXTA1N170DHV
Manufacturer
IXYS
Description
MOSFET N-CH 1700V 1A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IXTA1N170DHV.pdf IXTA1N170DHV PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXTA1N170DHV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 47nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V
Vgs (Max) ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 290W (Tc)
Rds On (Max) @ Id, Vgs 16 Ohm @ 500mA, 0V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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