IRFB812PBF

MOSFET N CH 500V 3.6A TO220AB
IRFB812PBF P1
IRFB812PBF P1
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Infineon Technologies ~ IRFB812PBF

Part Number
IRFB812PBF
Manufacturer
Infineon Technologies
Description
MOSFET N CH 500V 3.6A TO220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IRFB812PBF.pdf IRFB812PBF PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IRFB812PBF
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Rds On (Max) @ Id, Vgs 2.2 Ohm @ 2.2A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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