IPW50R399CPFKSA1

MOSFET N-CH 560V 9A TO-247
IPW50R399CPFKSA1 P1
IPW50R399CPFKSA1 P1
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Infineon Technologies ~ IPW50R399CPFKSA1

Part Number
IPW50R399CPFKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 560V 9A TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPW50R399CPFKSA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPW50R399CPFKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Rds On (Max) @ Id, Vgs 399 mOhm @ 4.9A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3

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