Images are for reference only.
See Product Specifications for product details.
| Part Number | IPL65R1K0C6SATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 328pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 34.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 1.5A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Thin-PAK (5x6) |
| Package / Case | 8-PowerVDFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IPL65R070C7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | 0 | Details | |
|
IPL65R099C7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | 0 | Details | |
 |
IPL65R130C7AUMA1 | Infineon Technologies | MOSFET N-CH 650V 15A 4VSON | 0 | Details | |
|
IPL65R165CFDAUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | 0 | Details | |
|
IPL65R165CFDAUMA2 | Infineon Technologies | HIGH POWERLEGACY | - | 32143 | Details |
|
IPL65R190E6AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | 0 | Details | |
|
IPL65R195C7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | 0 | Details | |
|
IPL65R1K0C6SATMA1 | Infineon Technologies | MOSFET N-CH 8TSON | 0 | Details | |
|
IPL65R1K5C6SATMA1 | Infineon Technologies | MOSFET N-CH 8TSON | 0 | Details | |
|
IPL65R210CFDAUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | 0 | Details | |
|
IPL65R210CFDAUMA2 | Infineon Technologies | LOW POWERLEGACY | - | 40366 | Details |
 |
IPL65R230C7AUMA1 | Infineon Technologies | MOSFET N-CH 650V 10A 4VSON | 0 | Details |