Images are for reference only.
See Product Specifications for product details.
| Part Number | IPL60R650P6SATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 557pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 56.8W (Tc) |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.4A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-ThinPak (5x6) |
| Package / Case | 8-PowerTDFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IPL60R060CFD7AUMA1 | Infineon Technologies | HIGH POWERNEW | - | 14137 | Details |
|
IPL60R065C7AUMA1 | Infineon Technologies | MOSFET HIGH POWER_NEW | 0 | Details | |
 |
IPL60R065P7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | - | 15553 | Details |
 |
IPL60R075CFD7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | - | 17393 | Details |
 |
IPL60R085P7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | - | 18690 | Details |
|
IPL60R095CFD7AUMA1 | Infineon Technologies | HIGH POWERNEW | - | 19641 | Details |
 |
IPL60R104C7AUMA1 | Infineon Technologies | MOSFET N-CH 600V 20A 4VSON | 0 | Details | |
 |
IPL60R105P7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | - | 23908 | Details |
|
IPL60R115CFD7AUMA1 | Infineon Technologies | HIGH POWERNEW | - | 23381 | Details |
|
IPL60R125C7AUMA1 | Infineon Technologies | MOSFET N-CH 600V 17A 4VSON | 0 | Details | |
 |
IPL60R125P7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | - | 30895 | Details |
|
IPL60R140CFD7AUMA1 | Infineon Technologies | HIGH POWERNEW | - | 27432 | Details |