IPC100N04S51R9ATMA1

N-CHANNEL_30/40V
IPC100N04S51R9ATMA1 P1
IPC100N04S51R9ATMA1 P1
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Infineon Technologies ~ IPC100N04S51R9ATMA1

Part Number
IPC100N04S51R9ATMA1
Manufacturer
Infineon Technologies
Description
N-CHANNEL_30/40V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPC100N04S51R9ATMA1.pdf IPC100N04S51R9ATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPC100N04S51R9ATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 7V, 10V
Vgs(th) (Max) @ Id 3.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Rds On (Max) @ Id, Vgs 1.9 mOhm @ 50A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-34
Package / Case 8-PowerTDFN

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