IPA030N10N3 G

MOSFET N-CH 100V 79A TO220-FP
IPA030N10N3 G P1
IPA030N10N3 G P1
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Infineon Technologies ~ IPA030N10N3 G

Part Number
IPA030N10N3 G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 79A TO220-FP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPA030N10N3 G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPA030N10N3 G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 79A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Rds On (Max) @ Id, Vgs 3 mOhm @ 79A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack

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