FZ800R12KS4B2NOSA1

MODULE IGBT A-IHM130-1
FZ800R12KS4B2NOSA1 P1
FZ800R12KS4B2NOSA1 P1
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Infineon Technologies ~ FZ800R12KS4B2NOSA1

Part Number
FZ800R12KS4B2NOSA1
Manufacturer
Infineon Technologies
Description
MODULE IGBT A-IHM130-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FZ800R12KS4B2NOSA1 PDF online browsing
Family
Transistors - IGBTs - Modules
  • In Stock : 60 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number FZ800R12KS4B2NOSA1
Part Status Not For New Designs
IGBT Type -
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1200A
Power - Max 7600W
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 800A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 52nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

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