FQPF10N20C

MOSFET N-CH 200V 9.5A TO-220F
FQPF10N20C P1
FQPF10N20C P1
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Fairchild/ON Semiconductor ~ FQPF10N20C

Part Number
FQPF10N20C
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 200V 9.5A TO-220F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FQPF10N20C PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 1254 pcs
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Product Parameter

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Part Number FQPF10N20C
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Rds On (Max) @ Id, Vgs 360 mOhm @ 4.75A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack

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