FQB8N90CTM

MOSFET N-CH 900V 6.3A D2PAK
FQB8N90CTM P1
FQB8N90CTM P1
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Fairchild/ON Semiconductor ~ FQB8N90CTM

Part Number
FQB8N90CTM
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 900V 6.3A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FQB8N90CTM PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FQB8N90CTM
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 6.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 171W (Tc)
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 3.15A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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