FDI038AN06A0

MOSFET N-CH 60V 80A TO-262AB
FDI038AN06A0 P1
FDI038AN06A0 P1
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Fairchild/ON Semiconductor ~ FDI038AN06A0

Part Number
FDI038AN06A0
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 60V 80A TO-262AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDI038AN06A0 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 780 pcs
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Product Parameter

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Part Number FDI038AN06A0
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 80A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 80A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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