EPC2111ENGRT

TRANS GAN ASYMMETRICAL HALF BRID
EPC2111ENGRT P1
EPC2111ENGRT P1
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See Product Specifications for product details.

EPC ~ EPC2111ENGRT

Part Number
EPC2111ENGRT
Manufacturer
EPC
Description
TRANS GAN ASYMMETRICAL HALF BRID
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- EPC2111ENGRT PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 6000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number EPC2111ENGRT
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Ta)
Rds On (Max) @ Id, Vgs 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

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