EPC2100

GAN TRANS ASYMMETRICAL HALF BRID
EPC2100 P1
EPC2100 P1
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See Product Specifications for product details.

EPC ~ EPC2100

Part Number
EPC2100
Manufacturer
EPC
Description
GAN TRANS ASYMMETRICAL HALF BRID
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- EPC2100 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 13977 pcs
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Product Parameter

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Part Number EPC2100
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

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