DMT10H010LK3-13

MOSFET N-CH 100V 68.8A TO252-3
DMT10H010LK3-13 P1
DMT10H010LK3-13 P1
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Diodes Incorporated ~ DMT10H010LK3-13

Part Number
DMT10H010LK3-13
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 100V 68.8A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DMT10H010LK3-13 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number DMT10H010LK3-13
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 68.8A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2592pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3W (Ta)
Rds On (Max) @ Id, Vgs 8.8 mOhm @ 13A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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