DMN80H2D0SCTI

MOSFET BVDSS: 651V 800V ITO-220A
DMN80H2D0SCTI P1
DMN80H2D0SCTI P1
Images are for reference only.
See Product Specifications for product details.

Diodes Incorporated ~ DMN80H2D0SCTI

Part Number
DMN80H2D0SCTI
Manufacturer
Diodes Incorporated
Description
MOSFET BVDSS: 651V 800V ITO-220A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DMN80H2D0SCTI PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 0 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number DMN80H2D0SCTI
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1253pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Rds On (Max) @ Id, Vgs 2 Ohm @ 2.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab

Related Products

All Products