Images are for reference only.
See Product Specifications for product details.
| Part Number | 1N5819M-13 |
|---|---|
| Part Status | Obsolete |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 600mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 1mA @ 40V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AB, MELF (Glass) |
| Supplier Device Package | MELF |
| Operating Temperature - Junction | -60°C ~ 125°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
1N5802 | Microsemi Corporation | DIODE GEN PURP 50V 1A AXIAL | - | 262 | Details |
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1N5802US | Microsemi Corporation | DIODE GEN PURP 50V 1A D5A | - | 181 | Details |
 |
1N5803 | Microsemi Corporation | DIODE GEN PURP 75V 1A AXIAL | - | 0 | Details |
 |
1N5804 | Microsemi Corporation | DIODE GEN PURP 100V 1A AXIAL | - | 478 | Details |
 |
1N5804US | Microsemi Corporation | DIODE GEN PURP 100V 1A D5A | - | 104 | Details |
 |
1N5805 | Microsemi Corporation | DIODE GEN PURP 125V 1A AXIAL | - | 0 | Details |
 |
1N5806 | Semtech Corporation | D MET 2.5A SFST 150V | - | 0 | Details |
|
1N5806/TR | Microsemi Corporation | UFRFRR | - | 12 | Details |
|
1N5806C.TR | Semtech Corporation | DIODE GEN PURP 150V 2.5A AXIAL | - | 0 | Details |
|
1N5806E3/TR | Microsemi Corporation | UFRFRR | - | 12 | Details |
 |
1N5806TR | Microsemi Corporation | DIODE GEN PURP 150V 2.5A AXIAL | - | 0 | Details |
|
1N5806US | Microsemi Corporation | DIODE GEN PURP 150V 1A D5A | - | 229 | Details |