S27KS0641DPBHB023

NOR
S27KS0641DPBHB023 P1
S27KS0641DPBHB023 P1
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Cypress Semiconductor Corp ~ S27KS0641DPBHB023

Part Number
S27KS0641DPBHB023
Manufacturer
Cypress Semiconductor Corp
Description
NOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- S27KS0641DPBHB023 PDF online browsing
Family
Memory
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Product Parameter

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Part Number S27KS0641DPBHB023
Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology DRAM
Memory Size 64Mb (8M x 8)
Clock Frequency 166MHz
Write Cycle Time - Word, Page -
Access Time 40ns
Memory Interface Parallel
Voltage - Supply 1.7 V ~ 1.95 V
Operating Temperature -40°C ~ 105°C (TA)
Mounting Type -
Package / Case -
Supplier Device Package -

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