A1N4007G-G

DIODE GEN PURP 1KV 1A DO41
A1N4007G-G P1
A1N4007G-G P1
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Comchip Technology ~ A1N4007G-G

Part Number
A1N4007G-G
Manufacturer
Comchip Technology
Description
DIODE GEN PURP 1KV 1A DO41
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
A1N4007G-G.pdf A1N4007G-G PDF online browsing
Family
Diodes - Rectifiers - Single
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Product Parameter

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Part Number A1N4007G-G
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1000V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 5µA @ 1000V
Capacitance @ Vr, F 10pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Supplier Device Package DO-41
Operating Temperature - Junction -55°C ~ 125°C

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