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| Número de pieza | VS-GB100TP120N |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | - |
| Configuración | Half Bridge |
| Voltaje: ruptura del emisor del colector (máximo) | 1200V |
| Current - Collector (Ic) (Max) | 200A |
| Potencia - Max | 650W |
| Vce (on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
| Corriente - corte de colector (máximo) | 5mA |
| Capacitancia de entrada (Cies) @ Vce | 7.43nF @ 25V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | INT-A-Pak |
| Paquete de dispositivo del proveedor | INT-A-PAK |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
|
VS-GB05XP120KTPBF | Vishay Semiconductor Diodes Division | MODULE MTP SWITCH | 0 | Detalles | |
|
VS-GB100DA60UP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | 0 | Detalles | |
|
VS-GB100LH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | - | 0 | Detalles |
|
VS-GB100LP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 658W INT-A-PAK | - | 0 | Detalles |
|
VS-GB100NH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | - | 0 | Detalles |
|
VS-GB100TH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | - | 0 | Detalles |
|
VS-GB100TH120U | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 1136W INT-A-PAK | - | 0 | Detalles |
|
VS-GB100TP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 650W INT-A-PAK | - | 0 | Detalles |
|
VS-GB100TP120U | Vishay Semiconductor Diodes Division | IGBT 1200V 150A 735W INT-A-PAK | - | 0 | Detalles |
|
VS-GB100TS60NPBF | Vishay Semiconductor Diodes Division | IGBT 600V 108A 390W INT-A-PAK | - | 0 | Detalles |
|
VS-GB100YG120NT | Vishay Semiconductor Diodes Division | OUTPUT SW MODULES - ECONO IGBT | - | 160 | Detalles |
|
VS-GB150LH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 300A 1389W INT-A-PAK | - | 0 | Detalles |