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Ver especificaciones del producto para detalles del producto.
| Número de pieza | GL41B-E3/96 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - promedio rectificado (Io) | 1A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 1A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 100V |
| Capacitancia @ Vr, F | 8pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-213AB, MELF (Glass) |
| Paquete de dispositivo del proveedor | DO-213AB |
| Temperatura de funcionamiento - unión | -65°C ~ 175°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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GL4100 | Sharp Microelectronics | EMITTER IR 950NM 50MA RADIAL | 0 | Detalles | |
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GL4100E0000F | Sharp Microelectronics | EMITTER IR 950NM 50MA RADIAL | 0 | Detalles | |
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GL41A-E3/96 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO213AB | - | 0 | Detalles |
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GL41A-E3/97 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO213AB | - | 10000 | Detalles |
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GL41A/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO213AB | - | 0 | Detalles |
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GL41AHE3/96 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO213AB | - | 0 | Detalles |
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GL41AHE3/97 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO213AB | - | 0 | Detalles |
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GL41B-E3/96 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO213AB | - | 0 | Detalles |
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GL41B-E3/97 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO213AB | - | 0 | Detalles |
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GL41B/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO213AB | - | 0 | Detalles |
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GL41BHE3/96 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO213AB | - | 0 | Detalles |
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GL41BHE3/97 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO213AB | - | 0 | Detalles |