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Ver especificaciones del producto para detalles del producto.
| Número de pieza | BAQ334-TR |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 60V |
| Corriente - promedio rectificado (Io) | 200mA |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1V @ 100mA |
| Velocidad | Small Signal =< 200mA (Io), Any Speed |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 1nA @ 30V |
| Capacitancia @ Vr, F | 3pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 2-SMD, No Lead |
| Paquete de dispositivo del proveedor | MicroMELF |
| Temperatura de funcionamiento - unión | -65°C ~ 175°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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BAQ133-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 30V 200MA SOD80 | - | 0 | Detalles |
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BAQ133-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 30V 200MA SOD80 | - | 0 | Detalles |
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BAQ134-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 60V 200MA SOD80 | - | 0 | Detalles |
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BAQ134-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 60V 200MA SOD80 | - | 0 | Detalles |
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BAQ135-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 125V 200MA SOD80 | - | 0 | Detalles |
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BAQ135-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 125V 200MA SOD80 | - | 0 | Detalles |
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BAQ33-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 30V 200MA SOD80 | - | 0 | Detalles |
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BAQ33-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 30V 200MA SOD80 | - | 0 | Detalles |
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BAQ333-TR | Vishay Semiconductor Diodes Division | DIODE GEN 40V 200MA MICROMELF | - | 5000 | Detalles |
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BAQ333-TR3 | Vishay Semiconductor Diodes Division | DIODE GEN 30V 200MA MICROMELF | - | 0 | Detalles |
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BAQ334-TR | Vishay Semiconductor Diodes Division | DIODE GEN 60V 200MA MICROMELF | - | 0 | Detalles |
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BAQ334-TR3 | Vishay Semiconductor Diodes Division | DIODE GEN 60V 200MA MICROMELF | - | 0 | Detalles |