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| Número de pieza | 6A100GHB0G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 1000V |
| Corriente - promedio rectificado (Io) | 6A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1V @ 6A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 1000V |
| Capacitancia @ Vr, F | 60pF @ 4V, 1MHz |
| Tipo de montaje | Through Hole |
| Paquete / caja | R6, Axial |
| Paquete de dispositivo del proveedor | R-6 |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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6A10 | Micro Commercial Co | DIODE GEN PURP 1KV 6A R6 | - | 0 | Detalles |
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6A10-G | Comchip Technology | DIODE GEN PURP 1KV 6A R6 | 0 | Detalles | |
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6A10-T | Diodes Incorporated | DIODE GEN PURP 1KV 6A R6 | - | 35500 | Detalles |
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6A10-TP | Micro Commercial Co | DIODE GEN PURP 1KV 6A R6 | - | 5500 | Detalles |
|
6A100G A0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | 412528 | Detalles |
|
6A100G B0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | 412528 | Detalles |
|
6A100G R0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | 344529 | Detalles |
|
6A100GHA0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | 386276 | Detalles |
|
6A100GHB0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | 386276 | Detalles |
|
6A100GHR0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | 326979 | Detalles |
 |
6A10B-G | Comchip Technology | DIODE GEN PURP 1KV 6A R6 | 0 | Detalles | |
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6A10G A0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | - | 455653 | Detalles |