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Ver especificaciones del producto para detalles del producto.
| Número de pieza | 1N914B A0G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - promedio rectificado (Io) | 150mA |
| Voltaje - Adelante (Vf) (Máx) @ Si | 720mV @ 5mA |
| Velocidad | Small Signal =< 200mA (Io), Any Speed |
| Tiempo de recuperación inversa (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 5µA @ 75V |
| Capacitancia @ Vr, F | 4pF @ 0V, 1MHz |
| Tipo de montaje | Through Hole |
| Paquete / caja | DO-204AH, DO-35, Axial |
| Paquete de dispositivo del proveedor | DO-35 |
| Temperatura de funcionamiento - unión | -65°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
 |
1N914 | Microsemi Corporation | DIODE GEN PURP 75V 200MA DO35 | - | 599 | Detalles |
 |
1N914-T50A | ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 5726971 | Detalles |
 |
1N914-TP | Micro Commercial Co | DIODE GEN PURP 100V 200MA DO35 | - | 0 | Detalles |
 |
1N914A | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 0 | Detalles |
 |
1N914ATR | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 20000 | Detalles |
 |
1N914A_T50R | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 0 | Detalles |
 |
1N914B | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 13981 | Detalles |
|
1N914B A0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 150MA DO35 | - | 4786349 | Detalles |
 |
1N914B,113 | NXP USA Inc. | DIODE GEN PURP 100V 200MA ALF2 | 0 | Detalles | |
 |
1N914B-TP | Micro Commercial Co | DIODE GEN PURP 100V 200MA DO35 | - | 0 | Detalles |
 |
1N914BTR | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 80000 | Detalles |
 |
1N914BTR_S00Z | ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 10847 | Detalles |