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Ver especificaciones del producto para detalles del producto.
| Número de pieza | 1SS356TW11 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard - Single |
| Voltaje - Pico Inverso (Máx) | 35V |
| Actual - Max | 100mA |
| Capacitancia @ Vr, F | 1.2pF @ 6V, 1MHz |
| Resistencia @ Si, F | 900 mOhm @ 2mA, 100MHz |
| Disipación de potencia (Máx) | 200mW |
| Temperatura de funcionamiento | 125°C (TJ) |
| Paquete / caja | SC-90, SOD-323F |
| Paquete de dispositivo del proveedor | UMD2 |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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1SS300,LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA USM | - | 0 | Detalles |
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1SS301,LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA USM | - | 0 | Detalles |
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1SS301SU,LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SC70 | - | 0 | Detalles |
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1SS302A,LF | Toshiba Semiconductor and Storage | DIODE SW 80V 100MA USM SC70 | 0 | Detalles | |
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1SS302TE85LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SC70 | - | 6000 | Detalles |
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1SS306TE85LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 200V 100MA SC61B | - | 0 | Detalles |
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1SS307(TE85L,F) | Toshiba Semiconductor and Storage | DIODE GEN PURP 30V 100MA SMINI | - | 0 | Detalles |
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1SS307E,L3F | Toshiba Semiconductor and Storage | DIODE SW GP 80V 100MA ESC | 9628 | Detalles | |
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1SS308(TE85L,F | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SC74A | - | 0 | Detalles |
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1SS309(TE85L,F) | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SMV | - | 6000 | Detalles |
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1SS315TPH3F | Toshiba Semiconductor and Storage | DIODE SCHOTTKY 5V 30MA USC | 9060 | Detalles | |
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1SS319(TE85L,F) | Toshiba Semiconductor and Storage | DIODE SCHOTKY GP 40V 100MA SC61B | - | 9000 | Detalles |