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| Número de pieza | NGTD8R65F2WP |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 650V |
| Corriente - promedio rectificado (Io) | - |
| Voltaje - Adelante (Vf) (Máx) @ Si | 2.8V @ 30A |
| Velocidad | - |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 1µA @ 650V |
| Capacitancia @ Vr, F | - |
| Tipo de montaje | Surface Mount |
| Paquete / caja | Die |
| Paquete de dispositivo del proveedor | Die |
| Temperatura de funcionamiento - unión | 175°C (Max) |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
|
NGTD13R120F2SWK | ON Semiconductor | DIODE GEN PURP 1.2KV DIE | - | 20763 | Detalles |
|
NGTD13R120F2WP | ON Semiconductor | DIODE GEN PURP 1.2KV DIE | - | 22784 | Detalles |
|
NGTD13T65F2SWK | ON Semiconductor | IGBT TRENCH FIELD STOP 650V DIE | - | 55385 | Detalles |
|
NGTD13T65F2WP | ON Semiconductor | IGBT TRENCH FIELD STOP 650V DIE | - | 0 | Detalles |
|
NGTD14T65F2SWK | ON Semiconductor | IGBT TRENCH FIELD STOP 650V DIE | - | 27717 | Detalles |
|
NGTD14T65F2WP | ON Semiconductor | IGBT TRENCH FIELD STOP 650V DIE | - | 20828 | Detalles |
|
NGTD15R65F2SWK | ON Semiconductor | DIODE GEN PURP 650V DIE | - | 63422 | Detalles |
|
NGTD15R65F2WP | ON Semiconductor | DIODE GEN PURP 650V DIE | - | 28198 | Detalles |
|
NGTD17R120F2SWK | ON Semiconductor | DIODE GEN PURP 1.2KV DIE | - | 10718 | Detalles |
|
NGTD17R120F2WP | ON Semiconductor | DIODE GEN PURP 1.2KV DIE | - | 25077 | Detalles |
|
NGTD17T65F2SWK | ON Semiconductor | IGBT TRENCH FIELD STOP 650V DIE | - | 3585 | Detalles |
|
NGTD17T65F2WP | ON Semiconductor | IGBT TRENCH FIELD STOP 650V DIE | - | 0 | Detalles |