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Ver especificaciones del producto para detalles del producto.
| Número de pieza | BAS21AHT1G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 250V |
| Corriente - promedio rectificado (Io) | 200mA (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.25V @ 200mA |
| Velocidad | Small Signal =< 200mA (Io), Any Speed |
| Tiempo de recuperación inversa (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 40nA @ 200V |
| Capacitancia @ Vr, F | 5pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SC-76, SOD-323 |
| Paquete de dispositivo del proveedor | SOD-323 |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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BAS20 | Fairchild/ON Semiconductor | DIODE GP 200V 200MA SOT23-3 | - | 0 | Detalles |
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BAS20 RFG | Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 200MA SOT23 | - | 1755335 | Detalles |
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BAS20,215 | Nexperia USA Inc. | DIODE GEN PURP 150V 200MA SOT23 | 12000 | Detalles | |
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BAS20,235 | Nexperia USA Inc. | DIODE GEN PURP 150V 200MA SOT23 | 0 | Detalles | |
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BAS20-7 | Diodes Incorporated | DIODE GP 150V 200MA SOT23-3 | - | 0 | Detalles |
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BAS20-7-F | Diodes Incorporated | DIODE GP 150V 200MA SOT23-3 | - | 0 | Detalles |
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BAS20-E3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 200MA SOT23 | - | 0 | Detalles |
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BAS20-E3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 200MA SOT23 | - | 0 | Detalles |
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BAS20-G3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 200MA SOT23 | - | 0 | Detalles |
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BAS20-G3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 200MA SOT23 | - | 0 | Detalles |
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BAS20-HE3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 200MA SOT23 | - | 0 | Detalles |
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BAS20-HE3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 200MA SOT23 | - | 0 | Detalles |