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| Número de pieza | 1N5615US/TR |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 200V |
| Corriente - promedio rectificado (Io) | 1A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.6V @ 3A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 150ns |
| Current - Reverse Leakage @ Vr | 500nA @ 200V |
| Capacitancia @ Vr, F | 45pF @ 12V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SQ-MELF, A |
| Paquete de dispositivo del proveedor | D-5A |
| Temperatura de funcionamiento - unión | -65°C ~ 175°C |
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1N5615GP-E3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AC | - | 0 | Detalles |
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1N5615GP-E3/73 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AC | - | 0 | Detalles |
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1N5615GPHE3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AC | - | 0 | Detalles |