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| Número de pieza | 1N4448HWS-7-F |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 80V |
| Corriente - promedio rectificado (Io) | 250mA |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.25V @ 150mA |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 100nA @ 80V |
| Capacitancia @ Vr, F | 3.5pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SC-76, SOD-323 |
| Paquete de dispositivo del proveedor | SOD-323 |
| Temperatura de funcionamiento - unión | -65°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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1N4444-1 | Microsemi Corporation | DIODE SWITCHING | - | 0 | Detalles |
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1N4446 | Microsemi Corporation | DIODE GEN PURP 75V 200MA DO35 | 0 | Detalles | |
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1N4446 BK | Central Semiconductor Corp | DIODE GEN PURP 100V 150MA DO35 | 0 | Detalles | |
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1N4446 TR | Central Semiconductor Corp | DIODE GEN PURP 100V 150MA DO35 | - | 0 | Detalles |
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1N4446TR | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | 0 | Detalles | |
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1N4446_T50R | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | 0 | Detalles | |
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1N4447 | Fairchild/ON Semiconductor | DIODE GEN PURP 100V DO35 | - | 3195 | Detalles |
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1N4447TR | Fairchild/ON Semiconductor | DIODE GEN PURP 100V DO35 | - | 0 | Detalles |
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1N4448 | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 8637 | Detalles |
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1N4448 A0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 150MA DO35 | - | 5133294 | Detalles |
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1N4448 BK | Central Semiconductor Corp | DIODE GEN PURP 100V 150MA DO35 | 0 | Detalles | |
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1N4448 TR | Central Semiconductor Corp | DIODE GEN PURP 100V 150MA DO35 | - | 0 | Detalles |