VS-ETF150Y65N

IGBT 650V 150A EMIPAK-2B
VS-ETF150Y65N P1
VS-ETF150Y65N P1
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Vishay Semiconductor Diodes Division ~ VS-ETF150Y65N

Part Number
VS-ETF150Y65N
Manufacturer
Vishay Semiconductor Diodes Division
Description
IGBT 650V 150A EMIPAK-2B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- VS-ETF150Y65N PDF online browsing
Family
Transistors - IGBTs - Modules
  • In Stock : 9 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number VS-ETF150Y65N
Part Status Active
IGBT Type NPT
Configuration Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 201A
Power - Max 600W
Vce(on) (Max) @ Vge, Ic 2.17V @ 15V, 150A
Current - Collector Cutoff (Max) -
Input Capacitance (Cies) @ Vce -
Input Standard
NTC Thermistor Yes
Operating Temperature 175°C (TJ)
Mounting Type -
Package / Case Module
Supplier Device Package Module

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