SUP50N03-5M1P-GE3

MOSFET N-CH 30V 50A TO-220AB
SUP50N03-5M1P-GE3 P1
SUP50N03-5M1P-GE3 P1
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Vishay Siliconix ~ SUP50N03-5M1P-GE3

Part Number
SUP50N03-5M1P-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 30V 50A TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SUP50N03-5M1P-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SUP50N03-5M1P-GE3
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 59.5W (Tc)
Rds On (Max) @ Id, Vgs 5.1 mOhm @ 22A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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