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See Product Specifications for product details.
| Part Number | SIHU3N50DA-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.2 Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 177pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251) |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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SIHU3N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 3A TO251 IPAK | - | 0 | Details |
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SIHU3N50D-GE3 | Vishay Siliconix | MOSFET N-CH 500V 3A TO251 IPAK | - | 0 | Details |
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SIHU3N50DA-GE3 | Vishay Siliconix | MOSFET N-CHANNEL 500V 3A IPAK | - | 167480 | Details |