SIE820DF-T1-E3

MOSFET N-CH 20V 50A 10-POLARPAK
SIE820DF-T1-E3 P1
SIE820DF-T1-E3 P1
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Vishay Siliconix ~ SIE820DF-T1-E3

Part Number
SIE820DF-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 20V 50A 10-POLARPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIE820DF-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SIE820DF-T1-E3
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 18A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (S)
Package / Case 10-PolarPAK® (S)

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