SI5980DU-T1-GE3

MOSFET 2N-CH 100V 2.5A CHIPFET
SI5980DU-T1-GE3 P1
SI5980DU-T1-GE3 P1
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Vishay Siliconix ~ SI5980DU-T1-GE3

Part Number
SI5980DU-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 100V 2.5A CHIPFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI5980DU-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number SI5980DU-T1-GE3
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2.5A
Rds On (Max) @ Id, Vgs 567 mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 78pF @ 50V
Power - Max 7.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® ChipFET™ Dual
Supplier Device Package PowerPAK® ChipFet Dual

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