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See Product Specifications for product details.
Part Number | SI4455DY-T1-GE3 |
---|---|
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5.9W (Tc) |
Rds On (Max) @ Id, Vgs | 295 mOhm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |