IRFBG30PBF

MOSFET N-CH 1000V 3.1A TO-220AB
IRFBG30PBF P1
IRFBG30PBF P2
IRFBG30PBF P3
IRFBG30PBF P1
IRFBG30PBF P2
IRFBG30PBF P3
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Vishay Siliconix ~ IRFBG30PBF

Part Number
IRFBG30PBF
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 1000V 3.1A TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IRFBG30PBF PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 3010 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number IRFBG30PBF
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 5 Ohm @ 1.9A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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