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See Product Specifications for product details.
| Part Number | TK8R2A06PL,S4X |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 28.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Rds On (Max) @ Id, Vgs | 11.4 mOhm @ 8A, 4.5V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
TK8R2A06PL,S4X | Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | - | 280 | Details |