TK10P60W,RVQ

MOSFET N CH 600V 9.7A DPAK
TK10P60W,RVQ P1
TK10P60W,RVQ P1
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Toshiba Semiconductor and Storage ~ TK10P60W,RVQ

Part Number
TK10P60W,RVQ
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N CH 600V 9.7A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TK10P60W,RVQ PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 4000 pcs
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Product Parameter

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Part Number TK10P60W,RVQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 300V
Vgs (Max) ±30V
FET Feature Super Junction
Power Dissipation (Max) 80W (Tc)
Rds On (Max) @ Id, Vgs 430 mOhm @ 4.9A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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