Images are for reference only.
See Product Specifications for product details.
| Part Number | TK10E60W,S1VX |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 100W (Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 4.9A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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TK10E60W,S1VX | Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | - | 150 | Details |