SSM6N16FUTE85LF

MOSFET 2N-CH 20V 0.1A US6
SSM6N16FUTE85LF P1
SSM6N16FUTE85LF P1
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Toshiba Semiconductor and Storage ~ SSM6N16FUTE85LF

Part Number
SSM6N16FUTE85LF
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET 2N-CH 20V 0.1A US6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SSM6N16FUTE85LF PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number SSM6N16FUTE85LF
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 100mA
Rds On (Max) @ Id, Vgs 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Power - Max 200mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6

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