RN1426TE85LF

TRANS PREBIAS NPN 200MW SMINI
RN1426TE85LF P1
RN1426TE85LF P1
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Toshiba Semiconductor and Storage ~ RN1426TE85LF

Part Number
RN1426TE85LF
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 200MW SMINI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- RN1426TE85LF PDF online browsing
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
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Product Parameter

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Part Number RN1426TE85LF
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 300MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini

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