Images are for reference only.
See Product Specifications for product details.
| Part Number | RN1117MFV,L3F |
|---|---|
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 10k |
| Resistor - Emitter Base (R2) (Ohms) | 4.7k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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RN1110(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | 0 | Details | |
 |
RN1110,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | - | 0 | Details |
 |
RN1110ACT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W CST3 | - | 0 | Details |
 |
RN1110CT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.05W CST3 | - | 0 | Details |
 |
RN1110MFV,L3F | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.15W VESM | 0 | Details | |
 |
RN1111,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | - | 0 | Details |
 |
RN1111ACT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W CST3 | - | 0 | Details |
 |
RN1111CT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.05W CST3 | 0 | Details | |
 |
RN1111MFV,L3F | Toshiba Semiconductor and Storage | X34 PB-F VESM PLN LF TRANSISTO | - | 2272607 | Details |
 |
RN1112(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | - | 0 | Details |
 |
RN1112ACT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W CST3 | 0 | Details | |
 |
RN1112CT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.05W CST3 | 0 | Details |