2SA1013-O,T6MIBF(J

TRANS PNP 1A 160V TO226-3
2SA1013-O,T6MIBF(J P1
2SA1013-O,T6MIBF(J P1
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Toshiba Semiconductor and Storage ~ 2SA1013-O,T6MIBF(J

Part Number
2SA1013-O,T6MIBF(J
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PNP 1A 160V TO226-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
2SA1013-O,T6MIBF(J.pdf 2SA1013-O,T6MIBF(J PDF online browsing
Family
Transistors - Bipolar (BJT) - Single
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Product Parameter

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Part Number 2SA1013-O,T6MIBF(J
Part Status Last Time Buy
Transistor Type PNP
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V
Power - Max 900mW
Frequency - Transition 50MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92L

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