TSM2NB65CH X0G

MOSFET N-CHANNEL 650V 2A TO251
TSM2NB65CH X0G P1
TSM2NB65CH X0G P1
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Taiwan Semiconductor Corporation ~ TSM2NB65CH X0G

Part Number
TSM2NB65CH X0G
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CHANNEL 650V 2A TO251
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TSM2NB65CH X0G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 7301 pcs
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Product Parameter

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Part Number TSM2NB65CH X0G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
FET Feature -
Power Dissipation (Max) 65W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Stub Leads, IPak

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