TSM170N06PQ56 RLG

MOSFET N-CH 60V 44A 8PDFN
TSM170N06PQ56 RLG P1
TSM170N06PQ56 RLG P1
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Taiwan Semiconductor Corporation ~ TSM170N06PQ56 RLG

Part Number
TSM170N06PQ56 RLG
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 60V 44A 8PDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TSM170N06PQ56 RLG PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 289240 pcs
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Product Parameter

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Part Number TSM170N06PQ56 RLG
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1556pF @ 30V
FET Feature -
Power Dissipation (Max) 73.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerTDFN

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