STS9P2UH7

MOSFET P-CH 20V 9A 8-SOIC
STS9P2UH7 P1
STS9P2UH7 P1
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STMicroelectronics ~ STS9P2UH7

Part Number
STS9P2UH7
Manufacturer
STMicroelectronics
Description
MOSFET P-CH 20V 9A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- STS9P2UH7 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number STS9P2UH7
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.5V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 16V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 2.7W (Tc)
Rds On (Max) @ Id, Vgs 22.5 mOhm @ 4.5A, 4.5V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

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