STP11NM60

MOSFET N-CH 650V 11A TO-220
STP11NM60 P1
STP11NM60 P1
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STMicroelectronics ~ STP11NM60

Part Number
STP11NM60
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 11A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- STP11NM60 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number STP11NM60
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 160W (Tc)
Rds On (Max) @ Id, Vgs 450 mOhm @ 5.5A, 10V
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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