EMF17T2R

TRANS NPN PREBIAS/PNP 0.15W EMT6
EMF17T2R P1
EMF17T2R P1
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Rohm Semiconductor ~ EMF17T2R

Part Number
EMF17T2R
Manufacturer
Rohm Semiconductor
Description
TRANS NPN PREBIAS/PNP 0.15W EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EMF17T2R.pdf EMF17T2R PDF online browsing
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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Product Parameter

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Part Number EMF17T2R
Part Status Not For New Designs
Transistor Type 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz, 140MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6

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