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See Product Specifications for product details.
Part Number | NVD5117PLT4G-VF01 |
---|---|
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 61A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 4.1W (Ta), 118W (Tc) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 29A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |